| Ident. | Authors (with country if any) | Title |
|---|
| 000012 |
| Strain induced composition profile in InGaN/GaN core-shell nanowires |
| 000242 |
| Growth of metamorphic InGaP layers on GaAs substrates |
| 000E08 |
| Metamorphic InGaAs telecom lasers on GaAs |
| 000E52 |
| Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method |
| 001358 |
| Metamorphic growth of 1.25-1.29 μm InGaAs quantum well lasers on GaAs by molecular beam epitaxy |
| 001359 |
| Metamorphic InGaAs quantum wells for light emission at 1.3-1.6 μm |
| 002651 |
| Observation of excitonic polariton and broadening of room-temperature exciton in strained InGaAs/GaAs quantum wells |
| 002671 |
| Photomodulated reflectance spectra of In0.2Ga0.8As/GaAs single quantum wells |
| 002738 |
| Absorption spectroscopy studies of strained InGaAs/GaAs single-quantum wells |
| 002752 |
| Influence of cap layer thickness on optical quality in In0.2Ga0.8As/GaAs single quantum wells |
